Характеристики продукта
Small Outline Dual In-line Memory Module
Fully Tested and Optimized for Stability and Performance
Uses Original IC to Meet Strict Industrial Standards
Anti-Sulfuration Protection Against Harsh Environments
JEDEC Standard 1.2V (1.26V~1.14V)
Operating Environment : -40°C ~ 95°C (Tc)
30μ” Gold Finger
RoHS Compliance
CE/FCC Certification
Партномера для заказа
Density | Component composition | Part Number | Rank | Voltage | Description |
4GB | 512Mx8 | M4S0-4GSSN5EM | 1Rx8 | 1.2V | DDR4 3200 WT SODIMM |
4GB | 512Mx16 | M4S0-4GSXZ5EM | 1Rx16 | 1.2V | DDR4 3200 WT SODIMM |
4GB | 512Mx16 | M4S0-4GMXZ5EM | 1Rx16 | 1.2V | DDR4 3200 WT SODIMM |
8GB | 512Mx8 | M4S0-8GSSO5EM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |
8GB | 1Gx8 | M4S0-8GS1N5EM | 1Rx8 | 1.2V | DDR4 3200 WT SODIMM |
8GB | 1Gx8 | M4S0-8GM1N5EM | 1Rx8 | 1.2V | DDR4 3200 WT SODIMM |
8GB | 1Gx16 | M4S0-8GSYZ5EM | 2Rx16 | 1.2V | DDR4 3200 WT SODIMM |
16GB | 1Gx8 | M4S0-AGS1O5EM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |
16GB | 1Gx8 | M4S0-AGM1O5EM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |
16GB | 2Gx8 | M4S0-AGS2N5EM | 1Rx8 | 1.2V | DDR4 3200 WT SODIMM |
16GB | 2Gx8 | M4S0-AGM2N5EM | 1Rx8 | 1.2V | DDR4 3200 WT SODIMM |
32GB | 2Gx8 | M4S0-BGS2O5EM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |
32GB | 2Gx8 | M4S0-BGM2O5EM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |
4GB | 512Mx8 | M4S0-4GSSNIEM | 1Rx8 | 1.2V | DDR4 3200 WT SODIMM |
8GB | 512Mx8 | M4S0-8GSSOIEM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |
8GB | 1Gx8 | M4S0-8GS1NIEM | 1Rx8 | 1.2V | DDR4 3200 WT SODIMM |
16GB | 1Gx8 | M4S0-AGS1OIEM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |
32GB | 2Gx8 | M4S0-BGS2OIEM | 2Rx8 | 1.2V | DDR4 3200 WT SODIMM |