Характеристики продукта
Small Outline Dual In-line Memory Module
Fully Tested and Optimized for Stability and Performance
Uses Original IC to Meet Strict Industrial Standards
JEDEC Standard 1.5V (1.425V~1.575V) & 1.35V (1.28V~1.45V)
Operating Environment : 0°C ~ 85°C
RoHS Compliance
CE/FCC Certification
Партномера для заказа
Density | Component Composition | Part Number | Rank | Voltage | Description |
1GB | 128Mx16 | M3S0-1GSWFCQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
1GB | 128Mx16 | M3S0-1GMWFCQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
2GB | 256Mx8 | M3S0-2GSJCCQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
2GB | 256Mx8 | M3S0-2GMJCCQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
2GB | 256Mx16 | M3S0-2GMVFCQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
2GB | 256Mx16 | M3S0-2GMVFCQE | 1Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 256Mx16 | M3S0-4GSV0CQE | 2Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 256Mx16 | M3S0-4GMV0CQE | 2Rx16 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 256Mx8 | M3S0-4GSJDCQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 256Mx8 | M3S0-4GMJDCQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 512Mx8 | M3S0-4GSSCCQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
4GB | 512Mx8 | M3S0-4GMSCCQE | 1Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
8GB | 512Mx8 | M3S0-8GSSDCQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |
8GB | 512Mx8 | M3S0-8GMSDCQE | 2Rx8 | 1.5V/1.35V | DDR3 1866 SODIMM |